G4S12040BM
- Mfr.Part #
- G4S12040BM
- Manufacturer
- Global Power Technology-GPT
- Package/Case
- -
- Datasheet
- G4S12040BM
- Description
- SIC SCHOTTKY DIODE 1200V 40A 3-P
- Stock
- 35000
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- Manufacturer :
- Global Power Technology-GPT
- Product Category :
- Discrete Semiconductor Products > Diodes - Rectifiers - Arrays
- Current - Average Rectified (Io) (per Diode) :
- 64.5A (DC)
- Current - Reverse Leakage @ Vr :
- 30 µA @ 1200 V
- Diode Configuration :
- 1 Pair Common Cathode
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- TO-247-3
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-247AB
- Voltage - DC Reverse (Vr) (Max) :
- 1200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.6 V @ 20 A
- Datasheets
- G4S12040BM
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G4S12040BM | Global Power Technology Co. Ltd | 35,000 | SIC SCHOTTKY DIODE 1200V 40A 3-P |