Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce : 2000 @ 500mA, 10V
- Transistor Type : NPN - Darlington
- Frequency - Transition : -
- Vce Saturation (Max) @ Ib, Ic : 1.3V @ 500µA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 80 V
- Supplier Device Package : SOT-223 (TO-261)
4 Records