Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Vce Saturation (Max) @ Ib, Ic：
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Power - Max : 200 mW
- Frequency - Transition : 200 MHz
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : PNP - Pre-Biased
- Resistor - Base (R1) : 10 kOhms
5 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
NTE Electronics, Inc. | T-PNP SI WITH 10K R... |
240
In-stock
|
Get Quote | ||
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|
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
35,000
In-stock
|
Get Quote | ||
|
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
35,000
In-stock
|
Get Quote | ||
|
|
Diotec Semiconductor | DIGITAL TR SOT-23 ... |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
35,000
In-stock
|
Get Quote |
