Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Power - Max : 200 mW
- Frequency - Transition : 200 MHz
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : PNP - Pre-Biased
- Resistor - Base (R1) : 47 kOhms
2 Records
Image | Part | Manufacturer | Description | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS PN... |
6,000
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q TR PNP... |
35,000
In-stock
|
Get Quote |