Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Infineon Technologies
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Transistor Type : NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Product Status : Active
- Package / Case : TO-236-3, SC-59, SOT-23-3
2 Records
Image | Part | Manufacturer | Description | Stock | Action | |
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Infineon Technologies | SMALL SIGNAL BIP... |
35,000
In-stock
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Infineon Technologies | BIPOLAR DIGITAL ... |
35,000
In-stock
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