Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
- Transistor Type : PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
- Power - Max : 200 mW
3 Records
