Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Diodes Incorporated
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Resistor - Base (R1) : 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 33 @ 10mA, 5V
6 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
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Diodes Incorporated | TRANS PREBIAS PN... |
35,000
In-stock
|
Get Quote | ||
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|
Diodes Incorporated | TRANS PREBIAS PN... |
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | TRANS PREBIAS PN... |
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | TRANS PREBIAS PN... |
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | TRANS PREBIAS PN... |
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | PREBIAS TRANSIST... |
35,000
In-stock
|
Get Quote |
