Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
2 Records
