Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Resistor - Base (R1) : 2.2 kOhms
8 Records
Image | Part | Manufacturer | Description | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
1,629
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
718
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
35,000
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q TR NPN... |
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Get Quote |