Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Base (R1)：
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- Filter：
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Package / Case : SC-70, SOT-323
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
9 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
6,640
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
525
In-stock
|
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Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
249
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | AUTO AEC-Q SINGLE... |
35,000
In-stock
|
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Toshiba Electronic Devices and Storage Corporation | PB-F USM TRANSIST... |
35,000
In-stock
|
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|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Get Quote |
