Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Supplier Device Package : UMT3
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
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| Image | Part | Manufacturer | Description | Stock | Action | |
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ROHM Semiconductor | DTC143XU3HZG IS AN... |
2,945
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ROHM Semiconductor | TRANS PREBIAS NP... |
106
In-stock
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