Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Supplier Device Package : SOT-23-3
- Frequency - Transition : 250 MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
5 Records
Image | Part | Manufacturer | Description | Stock | Action | |
---|---|---|---|---|---|---|
Diodes Incorporated | TRANS PREBIAS NP... |
664
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
35,000
In-stock
|
Get Quote | |||
Diodes Incorporated | PREBIAS TRANSIST... |
35,000
In-stock
|
Get Quote | |||
Diodes Incorporated | PREBIAS TRANSIST... |
35,000
In-stock
|
Get Quote | |||
Diodes Incorporated | TRANS PREBIAS NP... |
35,000
In-stock
|
Get Quote |