Transistors - Bipolar (BJT) - Single, Pre-Biased
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Package / Case : TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
10 Records
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|---|---|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation | TRANS PREBIAS NP... |
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Diodes Incorporated | PREBIAS TRANSIST... |
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Diodes Incorporated | TRANS PREBIAS NP... |
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Micro Commercial Components (MCC) | TRANS PREBIAS NP... |
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Diodes Incorporated | TRANS PREBIAS NP... |
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