Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max)：
-
- DC Current Gain (hFE) (Min) @ Ic, Vce：
-
- Frequency - Transition：
-
- Power - Max：
-
- Product Status：
-
- Resistor - Base (R1)：
-
- Supplier Device Package：
-
- Vce Saturation (Max) @ Ib, Ic：
-
- Filter：
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Resistor - Emitter Base (R2) : 10 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : NPN - Pre-Biased
- Package / Case : TO-236-3, SC-59, SOT-23-3
17 Records
