Transistors - Bipolar (BJT) - Single, Pre-Biased
- Frequency - Transition：
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- onsemi
- Resistor - Emitter Base (R2) : 10 kOhms
- Mounting Type : Through Hole
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Package / Case : TO-226-3, TO-92-3 Short Body
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Resistor - Base (R1) : 10 kOhms
4 Records
