J112,126
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- 制造商 :
- NXP Semiconductors
- 产品分类 :
- 分立半导体产品 > 晶体管 - JFET
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 5 mA @ 15 V
- Current Drain (Id) - Max :
- -
- Drain to Source Voltage (Vdss) :
- 40 V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 6pF @ 10V (VGS)
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Power - Max :
- 400 mW
- Product Status :
- Obsolete
- Resistance - RDS(On) :
- 50 Ohms
- Supplier Device Package :
- TO-92-3
- Voltage - Breakdown (V(BR)GSS) :
- 40 V
- Voltage - Cutoff (VGS off) @ Id :
- 1 V @ 1 µA
- 数据列表
- J112,126
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| J112RL1G | onsemi | 35,000 | JFET N-CH 35V 0.35W TO92 |
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| J112RLRAG | onsemi | 35,000 | JFET N-CH 35V 0.35W TO92 |
| J112_D11Z | onsemi | 35,000 | JFET N-CH 35V 625MW TO92 |
