AIHD10N60RFATMA1
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - IGBT - 单
- Current - Collector (Ic) (Max) :
- 20 A
- Current - Collector Pulsed (Icm) :
- 30 A
- Gate Charge :
- 64 nC
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power - Max :
- 150 W
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- PG-TO252-3-313
- Switching Energy :
- 190µJ (on), 160µJ (off)
- Td (on/off) @ 25°C :
- 12ns/168ns
- Test Condition :
- 400V, 10A, 26Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 10A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- 数据列表
- AIHD10N60RFATMA1
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| AIHD03N60RFATMA1 | Infineon Technologies | 35,000 | IC DISCRETE 600V TO252-3 |
| AIHD04N60RATMA1 | Infineon Technologies | 35,000 | IC DISCRETE 600V TO252-3 |
| AIHD04N60RFATMA1 | Infineon Technologies | 35,000 | IC DISCRETE 600V TO252-3 |
| AIHD06N60RATMA1 | Infineon Technologies | 35,000 | IC DISCRETE 600V TO252-3 |
| AIHD06N60RFATMA1 | Infineon Technologies | 35,000 | IC DISCRETE 600V TO252-3 |
| AIHD10N60RATMA1 | Infineon Technologies | 35,000 | IC DISCRETE 600V TO252-3 |
| AIHD15N60RATMA1 | Infineon Technologies | 35,000 | IC DISCRETE 600V TO252-3 |
| AIHD15N60RFATMA1 | Infineon Technologies | 35,000 | IC DISCRETE 600V TO252-3 |
| AIHDP-7500T-8G-2.5S256G-P216B12 | EFCO | 1 | INTEL6TH/7TH GEN SKY LAKE S/ KAB |
