HGTG12N60C3D
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- 制造商 :
- Fairchild Semiconductor
- 产品分类 :
- 分立半导体产品 > 晶体管 - IGBT - 单
- Current - Collector (Ic) (Max) :
- 24 A
- Current - Collector Pulsed (Icm) :
- 96 A
- Gate Charge :
- 48 nC
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- TO-247-3
- Power - Max :
- 104 W
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 42 ns
- Supplier Device Package :
- TO-247-3
- Switching Energy :
- 380µJ (on), 900µJ (off)
- Td (on/off) @ 25°C :
- -
- Test Condition :
- -
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 15A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- 数据列表
- HGTG12N60C3D
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部分 | 制造商 | 库存 | 描述 |
---|---|---|---|
HGTG10N120BND | onsemi | 2,165 | IGBT NPT 1200V 35A TO247-3 |
HGTG11N120CN | Fairchild Semiconductor | 971 | N-CHANNEL IGBT |
HGTG11N120CN | onsemi | 35,000 | IGBT 1200V 43A 298W TO247 |
HGTG11N120CND | onsemi | 366 | IGBT NPT 1200V 43A TO247-3 |
HGTG12N60A4 | Fairchild Semiconductor | 35,000 | N-CHANNEL IGBT |
HGTG12N60A4 | onsemi | 35,000 | IGBT 600V 54A 167W TO247 |
HGTG12N60A4D | onsemi | 35,000 | IGBT 600V 54A 167W TO247 |
HGTG12N60B3 | onsemi | 35,000 | IGBT 600V 27A 104W TO247 |
HGTG12N60C3D | Harris Corporation | 35,000 | UFS SERIES N-CH IGBT |
HGTG12N60C3D | onsemi | 35,000 | IGBT 600V 24A 104W TO247 |
HGTG12N60C3DR | Harris Corporation | 35,000 | UFS SERIES N-CHANNEL IGBT |
HGTG12N60D1D | Harris Corporation | 606 | UFS SERIES N-CHANNEL IGBT |
HGTG12N60DID | Harris Corporation | 15,378 | 24A, 600V, RUGGED, UFS SERIES N |
HGTG15N1203D | Harris Corporation | 35,000 | 35A, 1200V, UFS SERIES N-CHANNEL |
HGTG15N120C3 | Harris Corporation | 577 | 35A, 1200V, N-CHANNEL IGBT |