DF200R12W1H3FB11BOMA1

制造商零件号
DF200R12W1H3FB11BOMA1
制造商
Infineon Technologies
包装/案例
-
数据表
DF200R12W1H3FB11BOMA1
描述
IGBT MOD 1200V 30A 20MW
库存
35000

请求报价(RFQ)

* 联系人姓名:
  公司:
* 电子邮件:
  电话:
  评论:
制造商 :
Infineon Technologies
产品分类 :
分立半导体产品 > 晶体管 - IGBT - 模块
Configuration :
Three Phase Inverter
Current - Collector (Ic) (Max) :
30 A
Current - Collector Cutoff (Max) :
1 mA
IGBT Type :
Trench Field Stop
Input :
Standard
Input Capacitance (Cies) @ Vce :
6.15 nF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
Yes
Operating Temperature :
-40°C ~ 150°C
Package / Case :
Module
Power - Max :
20 mW
Product Status :
Discontinued at Digi-Key
Supplier Device Package :
Module
Vce(on) (Max) @ Vge, Ic :
1.45V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
数据列表
DF200R12W1H3FB11BOMA1

制造商相关产品

目录相关产品

相关产品

部分 制造商 库存 描述
DF2000MA-49-50 3M 29 DF2000MA W/ADHESIVE 49INX50YDS
DF2001A Siglent Technologies 4 POWER ANALYSIS DESKEW FIXTURE- F
DF2005-G Comchip Technology 35,000 BRIDGE RECT 1PHASE 50V 2A 4-DF
DF2005S-G Comchip Technology 35,000 BRIDGE RECT 1PHASE 50V 2A DFS
DF2005SP-G Comchip Technology 35,000 BRIDGE RECT 1PHASE 50V 2A DFS
DF2005ST-G Comchip Technology 35,000 BRIDGE RECT 1PHASE 50V 2A DFS
DF200AB160 Sansha Electric 35,000 DIOE MODULE 1600V 200A
DF200AB80 Sansha Electric 35,000 DIOE MODULE 800V 200A
DF200AE160 Sansha Electric 35,000 DIODE MODULE 1600V 200A
DF200AE80 Sansha Electric 35,000 DIODE MODULE 800V 200A
DF200R07W2H3B77BPSA1 Infineon Technologies 15 LOW POWER EASY AG-EASY2B-411
DF200R12KE3HOSA1 Infineon Technologies 35,000 IGBT MODULE 1200V 1040W
DF200R12PT4B6BOSA1 Infineon Technologies 35,000 IGBT MOD 1200V 300A 1100W
DF200R12W1H3B27BOMA1 Infineon Technologies 35,000 IGBT MOD 1200V 30A 375W
DF200R12W1H3FB11BPSA1 Infineon Technologies 35,000 IGBT MOD DIODE BRDG EASY1B-2-1