BSM100GB120DN2HOSA1

制造商 :

Infineon Technologies

产品分类 :

分立半导体产品 > 晶体管 - IGBT - 模块

Configuration :

Half Bridge

Current - Collector (Ic) (Max) :

150 A

Current - Collector Cutoff (Max) :

2 mA

IGBT Type :

-

Input :

Standard

Input Capacitance (Cies) @ Vce :

6.5 nF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

No

Operating Temperature :

150°C (TJ)

Package / Case :

Module

Power - Max :

800 W

Product Status :

Not For New Designs

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 100A

Voltage - Collector Emitter Breakdown (Max) :

1200 V