FF225R12ME3BOSA1
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - IGBT - 模块
- Configuration :
- Half Bridge
- Current - Collector (Ic) (Max) :
- 325 A
- Current - Collector Cutoff (Max) :
- 5 mA
- IGBT Type :
- Trench Field Stop
- Input :
- Standard
- Input Capacitance (Cies) @ Vce :
- 16 nF @ 25 V
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- Yes
- Operating Temperature :
- -40°C ~ 125°C
- Package / Case :
- Module
- Power - Max :
- 1150 W
- Product Status :
- Not For New Designs
- Supplier Device Package :
- Module
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 225A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
- 数据列表
- FF225R12ME3BOSA1
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|---|---|---|---|
| FF225R12ME4B11BPSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 320A 1050W |
| FF225R12ME4B11BPSA2 | Infineon Technologies | 35,000 | MEDIUM POWER ECONO AG-ECONOD-411 |
| FF225R12ME4BDLA1 | Infineon Technologies | 35,000 | FF225R12 - INSULATEDGATEBIPOLART |
| FF225R12ME4BOSA1 | Infineon Technologies | 30 | IGBT MOD 1200V 320A 1050W |
| FF225R12ME4PB11BPSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 450A 20MW |
| FF225R12ME4PBPSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 450A 20MW |
| FF225R12ME4_B11 | Infineon Technologies | 35,000 | INSULATED GATE BIPOLAR TRANSISTO |
| FF225R12MS4BOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 275A 1450W |
| FF225R17ME3BOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1700V 340A 1400W |
| FF225R17ME4B11BOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1700V 340A 1500W |
| FF225R17ME4B11BPSA1 | Infineon Technologies | 35,000 | MEDIUM POWER ECONO AG-ECONOD-311 |
| FF225R17ME4BOSA1 | Infineon Technologies | 1 | IGBT MOD 1700V 340A 1500W |
| FF225R17ME4PB11BPSA1 | Infineon Technologies | 35,000 | IGBT MOD 1700V 450A 20MW |
| FF225R17ME4PBPSA1 | Infineon Technologies | 12 | FF225R17 - IGBT MODULE |
| FF225R17ME4PBPSA1 | Infineon Technologies | 35,000 | IGBT MOD 1700V 450A 20MW |
