DF200R12KE3HOSA1
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- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - IGBT - 模块
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- -
- Current - Collector Cutoff (Max) :
- 5 mA
- IGBT Type :
- -
- Input :
- Standard
- Input Capacitance (Cies) @ Vce :
- 14 nF @ 25 V
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- No
- Operating Temperature :
- -40°C ~ 125°C
- Package / Case :
- Module
- Power - Max :
- 1040 W
- Product Status :
- Active
- Supplier Device Package :
- Module
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 200A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
- 数据列表
- DF200R12KE3HOSA1
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