BSM100GB120DN2FE325HOSA1
- 制造商零件号
- BSM100GB120DN2FE325HOSA1
- 包装/案例
- -
- 描述
- BSM100GB120DN2 - IGBT MODULE
- 库存
- 60
请求报价（RFQ）
- * 联系人姓名:
- 公司:
- * 电子邮件:
- 电话:
- 评论:
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - IGBT - 模块
- Configuration :
- -
- Current - Collector (Ic) (Max) :
- -
- Current - Collector Cutoff (Max) :
- -
- IGBT Type :
- -
- Input :
- -
- Input Capacitance (Cies) @ Vce :
- -
- Mounting Type :
- -
- NTC Thermistor :
- -
- Operating Temperature :
- -
- Package / Case :
- -
- Power - Max :
- -
- Product Status :
- Active
- Supplier Device Package :
- -
- Vce(on) (Max) @ Vge, Ic :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- -
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| BSM1-C | Panduit Corporation | 35,000 | CONN SPLICE 18-20 AWG CRIMP |
| BSM1-X | Panduit Corporation | 35,000 | CONN SPLICE 18-20 AWG CRIMP |
| BSM100 | Brady Corporation | 35,000 | RUG) BSM100 RUG, 36"X100' |
| BSM100GAL120DLCKHOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 205A 835W |
| BSM100GB120DLCHOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 100A 830W |
| BSM100GB120DLCHOSA1 | Infineon Technologies | 121 | BSM100GB120 - INSULATED GATE BIP |
| BSM100GB120DLCKHOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 100A 830W |
| BSM100GB120DN2B2HOSA1 | Infineon Technologies | 17 | IGBT MODULE |
| BSM100GB120DN2HOSA1 | Infineon Technologies | 1,900 | MEDIUM POWER 62MM |
| BSM100GB120DN2HOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 150A 800W |
| BSM100GB120DN2K | Infineon Technologies | 35,000 | INSULATED GATE BIPOLAR TRANSISTO |
| BSM100GB120DN2KHOSA1 | Infineon Technologies | 457 | MEDIUM POWER 34MM |
| BSM100GB120DN2KHOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 145A 700W |
| BSM100GB120DN2S7HOSA1 | Infineon Technologies | 30 | INSULATED GATE BIPOLAR TRANSISTO |
| BSM100GB170DLCHOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1700V 200A 960W |
