BSB012NE2LXIXUMA1

制造商 :

Infineon Technologies

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

170A (Tc)

Drain to Source Voltage (Vdss) :

25 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

82 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

5852 pF @ 12 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

3-WDSON

Power Dissipation (Max) :

2.8W (Ta), 57W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

1.2mOhm @ 30A, 10V

Supplier Device Package :

MG-WDSON-2, CanPAK M™

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA