PMG45UN,115

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.3 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

184 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation (Max) :

375mW (Ta), 4.35W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

55mOhm @ 3A, 4.5V

Supplier Device Package :

6-TSSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

1V @ 250µA