IPD200N15N3GBTMA1

制造商 :

Infineon Technologies

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

8V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1820 pF @ 75 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

150W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

20mOhm @ 50A, 10V

Supplier Device Package :

PG-TO252-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 90µA