IPD200N15N3GBTMA1

制造商零件号
IPD200N15N3GBTMA1
制造商
Infineon Technologies
包装/案例
-
数据表
IPD200N15N3GBTMA1
描述
MOSFET N-CH 150V 50A TO252-3
库存
35000

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制造商 :
Infineon Technologies
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drain to Source Voltage (Vdss) :
150 V
Drive Voltage (Max Rds On, Min Rds On) :
8V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1820 pF @ 75 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
150W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
20mOhm @ 50A, 10V
Supplier Device Package :
PG-TO252-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 90µA
数据列表
IPD200N15N3GBTMA1

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