SI4110DY-T1-GE3

制造商 :

Vishay

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

17.3A (Tc)

Drain to Source Voltage (Vdss) :

80 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

53 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2205 pF @ 40 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

3.6W (Ta), 7.8W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

13mOhm @ 11.7A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA