TPC6109-H(TE85L,FM

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

5A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

490 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation (Max) :

700mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

59mOhm @ 2.5A, 10V

Supplier Device Package :

VS-6 (2.9x2.8)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.2V @ 200µA