STB100NF03L-03-1

制造商 :

STMicroelectronics

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

88 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

6200 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Power Dissipation (Max) :

300W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

3.2mOhm @ 50A, 10V

Supplier Device Package :

I2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.5V @ 250µA