SI3851DV-T1-E3

制造商 :

Vishay

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.6A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.6 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation (Max) :

830mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

200mOhm @ 1.8A, 10V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250µA (Min)