- 制造商 :
- onsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 3A (Ta)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.7V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 660 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-UFBGA, WLCSP
- Power Dissipation (Max) :
- 1.9W (Ta)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 90mOhm @ 1A, 4.5V
- Supplier Device Package :
- 6-WLCSP (1x1.5)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- 数据列表
- FDZ193P
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| FDZ1040L | Fairchild Semiconductor | 10,310 | SPST |
| FDZ1323NZ | onsemi | 35,000 | MOSFET 2N-CH 20V 10A 6WLCSP |
| FDZ1416NZ | onsemi | 35,000 | MOSFET 2N-CH 4WLCSP |
| FDZ1827NZ | Fairchild Semiconductor | 20,000 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDZ1905PZ | Fairchild Semiconductor | 2,700 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDZ1905PZ | onsemi | 35,000 | MOSFET 2P-CH 6WLCSP |
| FDZ191P | onsemi | 35,000 | MOSFET P-CH 20V 3A 6WLCSP |
| FDZ191P_P | onsemi | 35,000 | MOSFET P-CH 20V 3A 6WLCSP |
| FDZ193P | Fairchild Semiconductor | 780,536 | MOSFET P-CH 20V 3A 6WLCSP |
| FDZ197PZ | Fairchild Semiconductor | 29,400 | 3.8A, 20V, P-CHANNEL, MOSFET |
| FDZ197PZ | onsemi | 275,000 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDZ197PZ | onsemi | 35,000 | MOSFET P-CH 20V 3.8A 6WLCSP |
