NTD20N06L-1G

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

20A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

990 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation (Max) :

1.36W (Ta), 60W (Tj)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

48mOhm @ 10A, 5V

Supplier Device Package :

I-PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

2V @ 250µA