SPN02N60C3

制造商 :

Infineon Technologies

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

400mA (Ta)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

200 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

1.8W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

2.5Ohm @ 1.1A, 10V

Supplier Device Package :

PG-SOT223-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.9V @ 80µA