HUF76013D3ST
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- 制造商 :
- onsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 624 pF @ 20 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 50W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 20A, 10V
- Supplier Device Package :
- TO-252AA
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- 数据列表
- HUF76013D3ST
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| HUF75229P3_NL | Fairchild Semiconductor | 35,000 | N-CHANNEL POWER MOSFET |
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| HUF75307D3ST | Harris Corporation | 35,000 | MOSFET N-CH 55V 15A TO252 |
| HUF75307D3ST | onsemi | 35,000 | MOSFET N-CH 55V 15A TO252AA |
| HUF75307D3ST_NL | Fairchild Semiconductor | 2,597 | N-CHANNEL POWER MOSFET |
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| HUF75307T3ST | onsemi | 35,000 | MOSFET N-CH 55V 2.6A SOT223-4 |
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| HUF75309D3S | Harris Corporation | 35,000 | MOSFET N-CH 55V 19A DPAK |
| HUF75309D3S | onsemi | 35,000 | MOSFET N-CH 55V 19A DPAK |
