BTS115ANKSA1
请求报价(RFQ)
- * 联系人姓名:
- 公司:
- * 电子邮件:
- 电话:
- 评论:
- 制造商 :
- Infineon Technologies
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 15.5A (Tc)
- Drain to Source Voltage (Vdss) :
- 50 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 735 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 50W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 120mOhm @ 7.8A, 4.5V
- Supplier Device Package :
- TO-220AB
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- 数据列表
- BTS115ANKSA1
制造商相关产品
目录相关产品
相关产品
部分 | 制造商 | 库存 | 描述 |
---|---|---|---|
BTS105A | Essentra Components | 35,000 | HEX STANDOFF #6-32 BRASS 1/4" |
BTS110A | Essentra Components | 35,000 | HEX STANDOFF #6-32 BRASS 3/8" |
BTS110E3045ANTMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 100V 10A TO220AB |
BTS110NKSA1 | Infineon Technologies | 35,000 | MOSFET N-CH 100V 10A TO220AB |
BTS112A | Infineon Technologies | 3,397 | N-CHANNEL POWER MOSFET |
BTS112AE3045ANTMA1 | Infineon Technologies | 300 | N-CHANNEL POWER MOSFET |
BTS113AE3045ANTMA1 | Infineon Technologies | 35,000 | MOSFET N-CH 60V 11.5A TO220AB |
BTS113AE3064NKSA1 | Infineon Technologies | 35,000 | MOSFET N-CH 60V 11.5A TO220AB |
BTS113ANKSA1 | Infineon Technologies | 35,000 | MOSFET N-CH 60V 11.5A TO220AB |
BTS114A E3045A | Infineon Technologies | 4,000 | N-CHANNEL POWER MOSFET |
BTS114AE3045A | Infineon Technologies | 11,937 | N-CHANNEL POWER MOSFET |
BTS114AE3045ANTMA1 | Infineon Technologies | 26,000 | POWER FIELD-EFFECT TRANSISTOR, 1 |
BTS115A | Infineon Technologies | 35,000 | N-CHANNEL POWER MOSFET |
BTS115A | Essentra Components | 35,000 | HEX STANDOFF #6-32 BRASS 1/2" |
BTS115AE6327 | Infineon Technologies | 35,000 | N-CHANNEL POWER MOSFET |