PH1225AL,115

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

25 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

105 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

6380 pF @ 12 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

SOT-1023, 4-LFPAK

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.2mOhm @ 15A, 10V

Supplier Device Package :

LFPAK56; Power-SO8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.15V @ 1mA