TK16G60W5,RVQ

制造商零件号
TK16G60W5,RVQ
制造商
Toshiba Electronic Devices and Storage Corporation
包装/案例
-
数据表
TK16G60W5,RVQ
描述
PB-F POWER MOSFET TRANSISTOR DPA
库存
35000

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制造商 :
Toshiba Electronic Devices and Storage Corporation
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
15.8A (Ta)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1350 pF @ 300 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
130W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
230mOhm @ 7.9A, 10V
Supplier Device Package :
D2PAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4.5V @ 790µA
数据列表
TK16G60W5,RVQ

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