TPS1101DR

制造商 :

Texas Instruments

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

2.3A (Ta)

Drain to Source Voltage (Vdss) :

15 V

Drive Voltage (Max Rds On, Min Rds On) :

2.7V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.25 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Power Dissipation (Max) :

791mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.5A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+2V, -15V

Vgs(th) (Max) @ Id :

1.5V @ 250µA