IPS80R1K2P7AKMA1

制造商 :

Infineon Technologies

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

300 pF @ 500 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Stub Leads, IPak

Power Dissipation (Max) :

37W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 1.7A, 10V

Supplier Device Package :

PG-TO251-3-342

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 80µA