SSM6G18NU,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.6 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

270 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Power Dissipation (Max) :

1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

112mOhm @ 1A, 4.5V

Supplier Device Package :

6-µDFN (2x2)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 1mA