SCT1000N170

制造商 :

STMicroelectronics

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

Drain to Source Voltage (Vdss) :

1700 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13.3 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

133 pF @ 1000 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 200°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

96W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.3Ohm @ 3A, 20V

Supplier Device Package :

HiP247™

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+22V, -10V

Vgs(th) (Max) @ Id :

3.5V @ 1mA