R8006KND3TL1

制造商零件号
R8006KND3TL1
制造商
ROHM Semiconductor
包装/案例
-
数据表
R8006KND3TL1
描述
HIGH-SPEED SWITCHING NCH 800V 6A
库存
35000

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制造商 :
ROHM Semiconductor
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
6A (Ta)
Drain to Source Voltage (Vdss) :
800 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
650 pF @ 100 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
83W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
900mOhm @ 3A, 10V
Supplier Device Package :
TO-252
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
数据列表
R8006KND3TL1

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