HUF75333S3
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- 制造商 :
- Harris Corporation
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 66A (Tc)
- Drain to Source Voltage (Vdss) :
- 55 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 85 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 150W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 66A, 10V
- Supplier Device Package :
- D2PAK (TO-263)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- 数据列表
- HUF75333S3
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| HUF75307D3ST | onsemi | 35,000 | MOSFET N-CH 55V 15A TO252AA |
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| HUF75309D3S | Harris Corporation | 35,000 | MOSFET N-CH 55V 19A DPAK |
| HUF75309D3S | onsemi | 35,000 | MOSFET N-CH 55V 19A DPAK |
