PMK35EP,518

制造商 :

NXP Semiconductors

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

14.9A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2100 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

6.9W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

19mOhm @ 9.2A, 10V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

3V @ 250µA