RFM12N10

制造商零件号
RFM12N10
制造商
Harris Corporation
包装/案例
-
数据表
RFM12N10
描述
N-CHANNEL POWER MOSFET
库存
35000

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制造商 :
Harris Corporation
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
850 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-204AA, TO-3
Power Dissipation (Max) :
75W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
200mOhm @ 12A, 10V
Supplier Device Package :
TO-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
数据列表
RFM12N10

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