RRS100P03HZGTB
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- 制造商 :
- ROHM Semiconductor
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 10A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 39 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Power Dissipation (Max) :
- 2W (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 12.6mOhm @ 10A, 10V
- Supplier Device Package :
- 8-SOP
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- 数据列表
- RRS100P03HZGTB
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