SCT2280KEGC11

制造商 :

ROHM Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

36 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

667 pF @ 800 V

Mounting Type :

Through Hole

Operating Temperature :

175°C

Package / Case :

TO-247-3

Power Dissipation (Max) :

108W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

364mOhm @ 4A, 18V

Supplier Device Package :

TO-247N

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+22V, -6V

Vgs(th) (Max) @ Id :

4V @ 1.4mA