IPD30N06S215ATMA2

制造商零件号
IPD30N06S215ATMA2
制造商
Infineon Technologies
包装/案例
-
数据表
IPD30N06S215ATMA2
描述
MOSFET N-CH 55V 30A TO252-31
库存
35000

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制造商 :
Infineon Technologies
产品分类 :
分立半导体产品 > 晶体管 - FET、MOSFET - 单
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drain to Source Voltage (Vdss) :
55 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1485 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
136W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
14.7mOhm @ 30A, 10V
Supplier Device Package :
PG-TO252-3-11
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 80µA
数据列表
IPD30N06S215ATMA2

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