LND250K1-G

制造商 :

Microchip Technology

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

13mA (Tj)

Drain to Source Voltage (Vdss) :

500 V

Drive Voltage (Max Rds On, Min Rds On) :

0V

FET Feature :

Depletion Mode

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

10 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

360mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1000Ohm @ 500µA, 0V

Supplier Device Package :

SOT-23 (TO-236AB)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

-