SI8819EDB-T2-E1

制造商 :

Vishay

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

2.9A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 3.7V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

650 pF @ 6 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-XFBGA

Power Dissipation (Max) :

900mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

80mOhm @ 1.5A, 3.7V

Supplier Device Package :

4-MICRO FOOT® (0.8x0.8)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

900mV @ 250µA